TIP140 ? tip141 ? tip142 30/10/2012 comset semiconductors 1/3 n n p p n n s s i i l l i i c c o o n n d d a a r r l l i i n n g g t t o o n n s s , , s s i i l l i i c c o o n n p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s they are silicon epitaxial-base npn transistors in monolithic darlington configuration and are mounted in to-3pn plastic packtage. they are intended for use in power linear and switching application. the complementary are tip145, tip146, tip147. compliance to rohs absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage TIP140 60 v tip141 80 tip142 100 v cbo collector-base voltage TIP140 60 v tip141 80 tip142 100 v ebo emitter-base voltage 5.0 v i c collector current i c 10 a i cm 15 i b base current 0.5 a p t power dissipation @ t mb = 25 c 125 watts t j junction temperature 150 c t s storage temperature -65 to +150 thermal characteristics symbol ratings value unit r thj-mb thermal resistance junction - case 1 c / w
TIP140 ? tip141 ? tip142 30/10/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ceo collector cutoff current i b = 0 v ce = 30 v TIP140 - - 2 ma v ce = 40 v tip141 - - v ce = 50 v tip142 - - i ebo emitter cutoff current i c = 0 v be = 5 v TIP140 - - 2 ma tip141 - - tip142 - - i cbo collector cutoff current i e = 0 v cb = 60 v TIP140 - - 1 ma v cb = 80 v tip141 - - v cb = 100 v tip142 - - v ce0(sus) collector-emitter sustaining i b = 0 i c = 30 ma TIP140 60 - - v tip141 80 - - tip142 100 - - h fe dc current gain (*) v ce = 4 v i c = 5 a 1000 - - - v ce = 4 v i c = 10 a 500 - - v ce(sat) collector-emitter saturation voltage (*) i c = 5 a i b = 10 ma TIP140 - - 2 v tip141 tip142 i c = 10 a i b =40 ma TIP140 - - 3 tip141 tip142 v be base-emitter voltage (*) v ce = 4 v i c = 10 a TIP140 - - 3 v tip141 tip142 v f parallel diode forward voltage i f =10 a - - 3.5 v t on turn-on time v be(off) = -4.2v i c = 10 a, r l = 3 ? i b(on) = 40ma i b ( off ) = -40 ma - 0.9 - s t off turn-on time - 11 - (*) pulse width = 200 s, duty cycle 1.5%
TIP140 ? tip141 ? tip142 30/10/2012 comset semiconductors 3/3 mechanical data case to3pn n on isolated plastic package september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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